Characteristics of a P-Si Detector in High Energy Electron Fields

Abstract

Comparison of depth ionization distributions from a silicon semiconductor detector and depth dose curves from a plane parallel ionization chamber show that a semiconductor detector of p-type is well suited for relative electron dosimetry in the energy range of 6 to 20 MeV in Ep,0. Maximum deviations of the order of 1.5 per cent and of mm were obtained down to a phantom depth of about 1 mm. The directional dependence of the detector was about 4 per cent.